Ion-implanted semiconductor abrupt junction

Details Ion-implanted semiconductor abrupt junction Ion-implanted semiconductor abrupt junction

1976-08-02

1977-10-11

Edlow, Martin H.

357 91, 357 90, 357 89, H01L 29167

Patent

active

040539245

ABSTRACT:
A semiconductor abrupt junction having a relatively heavily doped region of first conductivity type, a relatively lightly doped region of opposite conductivity type, and immediately adjacent the effective junction, a thin "recombination layer" of first conductivity type and of dopant concentration intermediate that of the two junction regions. Preferably, the recombination layer overlaps the forward biased depletion region of the junction and has a thickness (typically 50 A to 200 A) much less than that of the junction depletion region under reverse bias. The recombination layer dopant ions thereby provide recombination-generation centers only where beneficial to improve the forward and reverse recovery times of the junction without degrading the steady state reverse current characteristics thereof. By further utilizing a very shallow (less than about 800 A) heavily doped region, very low forward turn-on voltage is achieved. The junction may be fabricated by controlled implantation of dopant ions.

REFERENCES:
patent: 3655457 (1972-04-01), Duffy
patent: 3723830 (1973-03-01), Frederiksen
patent: 3727116 (1973-04-01), Thomas

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