Ion implanted Schottky barrier diode

Details Ion implanted Schottky barrier diode Ion implanted Schottky barrier diode

1977-01-14

1978-06-27

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, B01J 700

Patent

active

040966224

ABSTRACT:
A Schottky barrier diode having a subsurface metalsemiconductor rectifying barrier with electrical rectification properties immune to semiconductor surface contamination. A special ion implantation technique is used to produce a very thin but strongly metallic island-like region in a semiconductive body. A Schottky barrier separates the region from the semiconductive body below the semiconductor body surface. A special truncated Gaussian profile in metal concentration through the thickness of the region provides low thermal and electrical resistance between the Schottky barrier and the region surface.

REFERENCES:
patent: 3747203 (1973-07-01), Shannon

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