Ion-implanted resist removal method

Details Ion-implanted resist removal method Ion-implanted resist removal method

1997-04-02

1999-04-20

Achutamurthy, Ponnathapura

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

438948, 134 2, 134 4, 216 49, 216 58, H01L 21306, B44C 122

Patent

active

058952721

ABSTRACT:
A method of removing a resist layer formed on a substrate wherein the resist layer includes an ion-implanted upper region. The method includes hydrogenating the ion implanted upper region of the resist layer resulting in the hydrogenated ion-implanted upper region. The resist layer, including the hydrogenated ion-implanted upper region is then removed. A hydrogenation of the ion-implanted upper region may be performed by immersing the resist layer, including the ion-implanted upper region, into pressurized boiling water, and/or treating the ion-implanted upper region with pressurized water vapor.

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Ohmura et al., "Enhanced hydrogenation and acceptor passivation Si by pressurized water boiling," Appl. Phys. Lett., 67(1), 64-66 (1995).
Rotondaro et al., "A Semi-Quantitative Method for Studying Phototresist Stripping," IMEC, Lab Chem. Biolog., Belgium, 6 pages (undated).

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