Ion implanted programmable cell for read only memory application

Details Ion implanted programmable cell for read only memory application Ion implanted programmable cell for read only memory application

1995-01-19

1996-08-27

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 45, 437 52, H01L 21265

Patent

active

055500757

ABSTRACT:
A method for fabricating read only memory, (ROM), devices, has been developed. The programmable cell of this ROM device is comprised of a P/N diode, place in a N+ buried bit line. The diode formation is accomplished using outdiffusion from a P+ polysilicon wordline, that is in direct contact to a specific bit line region.

REFERENCES:
patent: 5108937 (1992-04-01), Tsai et al.
patent: 5236853 (1993-08-01), Hsue
patent: 5264386 (1993-11-01), Yang
patent: 5308777 (1994-05-01), Hong
patent: 5334543 (1994-08-01), Lin et al.
patent: 5429975 (1995-07-01), Sheu et al.

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