Ion-implanted process for forming IC wafer with buried-Zener dio

Details Ion-implanted process for forming IC wafer with buried-Zener dio Ion-implanted process for forming IC wafer with buried-Zener dio

1987-06-10

1988-09-13

Roy, Upendra

Fishing, trapping, and vermin destroying

357 13, 357 91, 437904, H01L 21265, H01L 21223

Patent

active

047710110

ABSTRACT:
A new process making it possible to produce stable buried Zener diodes in large-sized wafers where slow ramping of diffusion temperatures is required to avoid crystal damage and other adverse effects. The process includes an initial deep ion implantation of p type dopant (boron). A second ion implantation of n type dopant (arsenic) is made over the p type implantation. Both implantations are driven in to the required degree. An additional p type dopant diffusion is made coincident with the base formation by ion implantation to establish connection to the original deep p-doped region, and an additional n type dopant diffusion is made coincident with the emitter formation to establish connection with the n type dopant implantation.

REFERENCES:
patent: 4213806 (1980-07-01), Tsang
patent: 4590664 (1986-05-01), Prentice et al.
patent: 4601760 (1986-07-01), Hemmah et al.

Affiliated with

Also associated with

Rating

Ion-implanted process for forming IC wafer with buried-Zener dio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion-implanted process for forming IC wafer with buried-Zener dio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion-implanted process for forming IC wafer with buried-Zener dio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-806788