Metal treatment – Compositions – Heat treating
Patent
1985-09-16
1986-07-22
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 148187, 357 13, 357 91, H01L 21265, H01L 21223
Patent
active
046017607
ABSTRACT:
A new process making it possible to produce stable buried Zener diodes in large-sized wafers where slow ramping of diffusion temperatures is required to avoid crystal damage and other adverse effects. The process includes an initial deep ion implantation of p type dopant (boron). A second ion implantation of n type dopant (arsenic) is made over the p type implantation. Both implantations are driven in to the required degree. An additional p type dopant diffusion is made coincident with the base formation by ion implantation to establish connection to the original deep p-doped region, and an additional n type dopant diffusion is made coincident with the emitter formation to establish connection with the n type dopant implantation.
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Hemmah Steven M.
Payne Richard S.
Analog Devices Incorporated
Roy Upendra
LandOfFree
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