Ion-implanted process for forming IC wafer with buried-reference

Metal treatment – Compositions – Heat treating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29576B, 148187, 357 13, 357 91, H01L 21265, H01L 21223

Patent

active

046017607

ABSTRACT:
A new process making it possible to produce stable buried Zener diodes in large-sized wafers where slow ramping of diffusion temperatures is required to avoid crystal damage and other adverse effects. The process includes an initial deep ion implantation of p type dopant (boron). A second ion implantation of n type dopant (arsenic) is made over the p type implantation. Both implantations are driven in to the required degree. An additional p type dopant diffusion is made coincident with the base formation by ion implantation to establish connection to the original deep p-doped region, and an additional n type dopant diffusion is made coincident with the emitter formation to establish connection with the n type dopant implantation.

REFERENCES:
patent: 4099998 (1978-07-01), Ferro et al.
patent: 4119440 (1978-10-01), Hile
patent: 4125415 (1978-11-01), Clark
patent: 4155777 (1979-05-01), Dunkley
patent: 4213806 (1980-07-01), Tsang
patent: 4224631 (1980-09-01), Vickery
patent: 4298401 (1981-11-01), Nuez et al.
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4473941 (1984-10-01), Turi et al.
patent: 4484206 (1984-11-01), Moroshima et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ion-implanted process for forming IC wafer with buried-reference does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion-implanted process for forming IC wafer with buried-reference, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion-implanted process for forming IC wafer with buried-reference will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-864442

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.