Ion-implanted planar-buried-heterostructure diode laser

Details Ion-implanted planar-buried-heterostructure diode laser Ion-implanted planar-buried-heterostructure diode laser

1990-01-25

1991-09-10

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 357 16, 357 17, H01S 319

Patent

active

050480383

ABSTRACT:
A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

REFERENCES:
patent: Re31806 (1985-01-01), Scifres et al.
patent: 4433417 (1984-02-01), Burnham et al.
patent: 4523961 (1985-06-01), Hartman et al.
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
patent: 4706255 (1987-11-01), Thornton et al.
patent: 4824798 (1989-04-01), Burnham et al.
R. Thornton et al., "Low Threshold Planar Buried Heterostructure Lasers Fabricated by Impurity-Induced Disordering", Applied Physics Letters, vol. 47, No. 12, Dec. 15, 1985, pp. 1239-1241.

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