Stock material or miscellaneous articles – Composite – Of silicon containing
Patent
1978-09-15
1981-04-14
Robinson, Ellis P.
Stock material or miscellaneous articles
Composite
Of silicon containing
428448, 350 17, 427 38, 427 39, 427162, 427164, 427167, 427 94, 148 15, B05D 306
Patent
active
042620562
ABSTRACT:
A single or multilayer optical interference filter and method of forming filter by ion implantation. One or more layers of nitrogen ions are implanted into a single crystal silicon with the crystal at a temperature of from about 600.degree. C. to about 1000.degree. C. The implanted ions create a buried layer(s) of silicon nitride (Si.sub.3 N.sub.4) whose refractive index is substantially different from that of silicon (Si) such that appreciable multiple reflection of incident light occurs between the buried layer(s) and the front surface. The resulting interference maxima and minima in transmitted or reflected light which occur at well-defined positions in wavelength may be controlled both in amplitude and wavelength position. The ions may be implanted in layers at different depths to produce a "thin film" interference filter.
REFERENCES:
patent: 3666548 (1972-05-01), Brack
patent: 3721584 (1973-03-01), Diem
patent: 3962062 (1976-06-01), Ingrey
patent: 3976511 (1976-08-01), Johnson
patent: 3976512 (1976-08-01), DeNora
patent: 4016007 (1977-04-01), Wada
patent: 4145457 (1979-03-01), Kersten
Hubler Graham K.
Malmberg Philip R.
Smith, III Theoren P.
Crane Melvin L.
Ellis William T.
Robinson Ellis P.
Sciascia Richard S.
The United States of America as represented by the Secretary of
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