Ion-implanted magnetic bubble device and a method of manufacturi

Details Ion-implanted magnetic bubble device and a method of manufacturi Ion-implanted magnetic bubble device and a method of manufacturi

1984-12-12

1987-10-20

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of inorganic material

427 38, 427127, 427130, 428900, B32B 900

Patent

active

047013850

ABSTRACT:
In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane direction for driving magnetic bubbles. For preventing the effective anisotropy field change from being decreased by heat treatment, ion species having large mass and projected standard deviation not greater than 1000 .ANG. are implanted. The ion species are preferably selected from He to Kr in the periodic table. The heat treatment is effected at a temperature in a range of 450.degree. C. to 900.degree. C.

REFERENCES:
patent: 4556582 (1985-12-01), Imura et al.
patent: 4568561 (1986-02-01), Betsui et al.

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