Ion-implanted, improved ohmic contacts for GaAs semiconductor de

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357 67, 357 68, 357 71, 357 22, 357 91, 357 52, H01L 2348, H01L 2940, H01L 2962

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042636051

ABSTRACT:
A method of attaining n.sup.+ regions with fine planar geometry in the source and drain of GaAs devices utilizing ion implantation which improves Ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. .sup.29 Si ions are implanted in the GaAs through the refractory film so that the peak concentration is no more than approximately 100 A below the TiW-GaAs interface. The entire structure is then annealed. A gold overlay is then deposited on the TiW layer to which electrical contacts may be attached and by which the contact resistivity is measured. Typical specific contact resistivity values are in the low 10.sup.-6 ohm/cm.sup.2 range.

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IBM Technical Disclosure Bulletin, vol. 14, No. 5, Oct. 1971, Metallic Mask abrication, by Walbarg, p. 1639.

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