Ion implanted gallium arsenide semiconductor devices fabricated

Details Ion implanted gallium arsenide semiconductor devices fabricated Ion implanted gallium arsenide semiconductor devices fabricated

1975-08-22

1977-07-05

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, H01L 2126

Patent

active

040337880

ABSTRACT:
Electrically isolated active device regions are fabricated in GaAs semi-insulating wafers by the implantation therein of sulphur ions. The implanted wafers are then coated with a passivating oxide and annealed at an elevated temperature of 800.degree. C or greater in order to achieve carrier mobilities in excess of 3000 cm.sup.2 /volt second.

REFERENCES:
patent: 3558366 (1971-01-01), Lepselter
patent: 3649369 (1972-03-01), Hunsperger et al.
patent: 3756861 (1973-09-01), Payne et al.
patent: 3804681 (1974-04-01), Drangeid et al.
patent: 3820235 (1974-06-01), Goldman
patent: 3880676 (1975-04-01), Douglas et al.
Sansbury et al., Radiation Effects, vol. 6, 1970, pp. 269-276, Science Publishers Ltd., Glasgow, Scotland.
Sansbury et al., Applied Physics Letters, vol. 14, No. 10, 1969.
Zelevinskaya et al., Soviet Physics--Semiconductors, vol. 4, No. 2, 1970.
Itoh et al. "As and Cd Implantations into N-type GaAs," J. Appl. Phys., vol. 42, No. 12, Nov. 1971, pp. 5120-5124.

Affiliated with

Also associated with

Rating

Ion implanted gallium arsenide semiconductor devices fabricated does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implanted gallium arsenide semiconductor devices fabricated , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanted gallium arsenide semiconductor devices fabricated will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-575257