Ion-implanted evaporated germanium layers as n.sup.+ contacts t

Details Ion-implanted evaporated germanium layers as n.sup.+ contacts t Ion-implanted evaporated germanium layers as n.sup.+ contacts t

1980-02-28

1981-11-03

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148171, 148177, 357 65, H01L 29161, H01L 2348, H01L 738, H01L 21265

Patent

active

042984033

ABSTRACT:
A method of forming a single, reliable n.sup.+ contact for discrete GaAs devices. A film of p-type Ge is deposited uniformly over the surface of a n-type GaAs substrate. Ions of phosphorous or arsenic are implanted to 5.times.10.sup.18 ions/cc at a depth of 1500 A. The ends and the sides of the substrate and Ge layer are capped by a CVD oxide and annealed at 450.degree.-500.degree. C. for about one hour. This process over-compensates the initial p-type layers which results in the Ge layer becoming n.sup.+. The oxide is removed by an etch process and the n.sup.+ Ge is etched to form two separate contact sections of n.sup.+ Ge. The n.sup.+ Ge is then metalized to form ohmic contacts by use of NiAu. A CVD oxide overcoat may again be applied and annealed at about 500.degree. C. to drive a shallow 200-500 A, n.sup.+ germanium diffusion into the substrate.

REFERENCES:
patent: 3959036 (1976-05-01), Ketchow
patent: 3987480 (1976-10-01), Diguet et al.
patent: 4011583 (1977-03-01), Levinstein et al.
patent: 4024569 (1977-05-01), Hawrylo et al.
Rao et al., J. Appl. Phys., 49, (1978), 3898.
Jaros et al., Solid State Electronics, 18, (1975), 1029.
Itoh et al., J. Appl. Phys., 42, (1971), 5120.
Woodall et al., IBM-TDB, 10, (1968), 1476.

Affiliated with

Also associated with

Rating

Ion-implanted evaporated germanium layers as n.sup.+ contacts t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion-implanted evaporated germanium layers as n.sup.+ contacts t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion-implanted evaporated germanium layers as n.sup.+ contacts t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1063027