Ion implanted eutectic gallium arsenide solar cell

Details Ion implanted eutectic gallium arsenide solar cell Ion implanted eutectic gallium arsenide solar cell

1976-12-08

1978-09-26

Mack, John H.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

29572, 148 15, 357 30, 357 90, 357 91, H01L 3106

Patent

active

041167171

ABSTRACT:
An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a plural vertical PN junction eutectic gallium arsenide cell body to obtain an electrical drift field, with multiple ion implants progressively larger in dose and progressively lower in implant energies to provide a P-type ion implanted top layer having a common connection to all P regions of the cell body and an N-type ion implanted bottom layer having a common connection to all N regions of the cell body. The implanted regions of the cell are pulsed electron beam annealed at room temperature.

REFERENCES:
patent: 3675026 (1972-07-01), Woodall
patent: 3969746 (1976-07-01), Kendall et al.
R. K. Smeltzer et al. "Vertical Multijunction Solar Cell Fabrication," Conf. Record, 10.sup.th IEEE Photospecialists' Conf., Palo Alto, Calif., Nov. 1973, pp. 194-196.
K. V. Vaidyanathan et al., "The Effect of Be.sup.+ Ion Implantation and Uniform Impurity Profiles on the Electrical Characteristics of GaAs Solar Cells," Conf. Record, 10.sup.th IEEE Photospecialists' Conf., Palo Alto, Calif., Nov. 1973, pp. 31-33.

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