Ion implanted archival memory media and methods for storage of d

Static information storage and retrieval – Read only systems – Semiconductive

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Details

357 91, 365118, 365178, G11C 1706, G11C 1136

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active

040644952

ABSTRACT:
A non-volatile archival memory storage media has a planar junction diode structure into which are written a plurality of diode bits permanently formed at or beneath the top surface thereof by selective ion implantation. Each of the plurality of ion implanted regions represents a data bit of a first binary value, with the remaining un-implanted regions of the planar diode representing data bits of the remaining binary value. The permanently stored data is read by inducing a flow of current by recombination phenomena responsive to a scanning electron beam sequentially incident on each of the possible data bit sites of an array of such sites in the planar diode. Wide bandwidth methods for writing the ion implantation sites into the planar diode media are disclosed.

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Bjorkquist, et al., Lattice Location of Dopant Elements Implanted into Ge, Applied Physics Letters, 12/1/68, vol. 13, No. 11, pp. 379-381.

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