Ion implantation to increase emitter energy gap in bipolar trans

Details Ion implantation to increase emitter energy gap in bipolar trans Ion implantation to increase emitter energy gap in bipolar trans

1984-07-11

1985-12-24

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148175, 148187, 357 34, 357 63, 357 91, H01L 21265, H01L 29161, H01L 2172

Patent

active

045596964

ABSTRACT:
The suppression of the reverse injection of the carriers in a bipolar transistor, without adversely effecting forward injection, is carried out by modifying the energy gap characteristics of the transistor so that a greater barrier to reverse injection is presented than that which is confronted by the forward injected carriers. The energy gap of the emitter is increased, relative to that of the base, through ion implantation. The ions which are implanted are such that the resulting compound material has a higher energy gap than that of silicon into which they are implanted to selectively modify the emitter region so as to locally increase its energy gap. Preferred materials include carbon and nitrogen.

REFERENCES:
patent: 2569347 (1951-09-01), Shockley
patent: 4178190 (1979-12-01), Polinsky
patent: 4302763 (1981-11-01), Ohuchi et al.
Kroemer, Herbert, "Heterostructure Bipolar Transistors and Integrated Circuits", Proceedings of the IEEE, vol. 70, No. 1, Jan. 1982, pp. 13-25.
Stephen et al. in Ion Implantation in Semiconductors, ed. S. Namba, Plenum, N.Y., 1975, p. 619.
Lee et al. in Ion-Implantation in Semiconductors, ed. S. Namba, Plenum, N.Y., 1975, p. 519.

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