Ion implantation target charge control system

Details Ion implantation target charge control system Ion implantation target charge control system

1993-10-07

1995-01-03

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

053788990

ABSTRACT:
A control system is provided for an ion implanter having an electron shower filament and a Faraday flag provided wherein the electron shower output is adjusted to maintain substantially continuous control of disk current during implantation, the control of the disk current of a target wafer during implantation being achieved by electrically isolating the target wafer, monitoring the disk current, and maintaining the electron shower filament current of the ion implanter at a level which permits rapid adjustment of the disk current during the time period required to close the Faraday flag.

REFERENCES:
patent: 4361762 (1982-11-01), Douglas
patent: 4929840 (1990-05-01), Dykstra et al.
patent: 5126576 (1992-06-01), Wauk et al.

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