Ion implantation systems

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

08039821

ABSTRACT:
An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.

REFERENCES:
patent: 6414327 (2002-07-01), Klinkowstein et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ion implantation systems does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation systems will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4281167

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.