Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2010-03-18
2011-10-18
Nguyen, Kiet (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
Reexamination Certificate
active
08039821
ABSTRACT:
An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.
REFERENCES:
patent: 6414327 (2002-07-01), Klinkowstein et al.
Kingstone Semiconductor Company, Limited
Lin Bo-In
Nguyen Kiet
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