Ion implantation system with protective plates of silicon in mas

Details Ion implantation system with protective plates of silicon in mas Ion implantation system with protective plates of silicon in mas

1993-05-14

1995-03-07

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504922, H01J 3700

Patent

active

053960769

ABSTRACT:
An ion implantation system composed of an ion source to generate ion beam, a mass analyzing region to select ions having a predetermined mass from the ion beam, an acceleration region to accelerate the ion beam selected, scanning regions to respectively scan the ion beam toward the X and Y directions, and protecting means located along the exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of a thin silicon plate, and located to cover the inner wall of the mass analyzing region. Preferably, the silicon plate is located at an upper and a lower portion of an exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of plurality of silicon plates that can be disassembled.

REFERENCES:
patent: 5134301 (1992-07-01), Kamata et al.

Affiliated with

Also associated with

Rating

Ion implantation system with protective plates of silicon in mas does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation system with protective plates of silicon in mas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation system with protective plates of silicon in mas will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1408014