Ion-implantation system using split ion beams

Details Ion-implantation system using split ion beams Ion-implantation system using split ion beams

1997-07-28

1998-06-16

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

057675228

ABSTRACT:
An ion-implantation system is provided, which is capable of successive ion-implantation processes into a same target under different ion-implantation conditions. This system has an ion generator for generating an initial ion beam of charged ions, an ion-beam splitter for splitting the initial ion beam into first to n-th ion beams where n is an integer greater than unity, an acceleration-energy controller for independently controlling the acceleration energies of the first to n-th ion beams, an ion-beam selector for selecting one of the first to n-th ion beams, and a target holder for holding a target thereon. The selected one of the first to n-th ion beams is irradiated to the target on the target holder, thereby implanting the charged ions contained in the initial ion beam into the target. The acceleration-energy controller may include an acceleration and/or deceleration tube for accelerating and/or decelerating the first to n-th ion beams.

REFERENCES:
patent: 4209704 (1980-06-01), Krimmel
patent: 4276477 (1981-06-01), Enge

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