Ion implantation system and method of monitoring implant...

Details Ion implantation system and method of monitoring implant... Ion implantation system and method of monitoring implant...

2008-08-18

2010-02-16

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S252100, C250S492200, C250S492300, C250S281000, C315S111610, C438S514000, C118S7230AN

Reexamination Certificate

active

07663126

ABSTRACT:
An ion implantation system and method of monitoring implant energy of an ion implantation device. The ion implantation system includes an ion implantation device and a monitoring device. The ion implantation device generates a plurality of charged particles and accelerates them with an accelerating voltage for ion implantation. The monitoring device performs spectroscopic analysis of the charged particles to obtain the real accelerating voltage. Thus, implant energy output by the ion implantation device can be calibrated.

REFERENCES:
patent: 5504341 (1996-04-01), Glavish
patent: 2006/0121707 (2006-06-01), Lee

Affiliated with

Also associated with

Rating

Ion implantation system and method of monitoring implant... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation system and method of monitoring implant..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation system and method of monitoring implant... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4191757