Ion implantation system and method adapted for serial wafer proc

Details Ion implantation system and method adapted for serial wafer proc Ion implantation system and method adapted for serial wafer proc

1997-10-29

1999-07-27

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25044211, H01L 21265, H01J 37317

Patent

active

059294566

ABSTRACT:
A serial wafer processing type ion implantation system and method suitable for small production of many product types. The ion implantation method implants ions while a first wafer group including at least one or more wafers is rotated along a first orbital path intersecting with a path of an ion beam and while a second wafer group including at least one or more wafers is rotated along a second orbital path intersecting with the path of the ion beam, at least a portion of the second orbital path being different from the first orbital path.

REFERENCES:
patent: 5003183 (1991-03-01), Nogami et al.
patent: 5194748 (1993-03-01), Aitken

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