Ion implantation source and device

Details Ion implantation source and device Ion implantation source and device

1983-02-10

1986-05-06

Smith, Alfred E.

Radiant energy

Ion generation

Field ionization type

2504922, H01J 2700

Patent

active

045874301

ABSTRACT:
Ion implantation devices in which the ion source is comprised of one or more vacuum spark gaps arranged to create a plasma and manipulated using magnetic fields are described. Each spark gap is comprised of a point electrode and a surface electrode with the plasma being generated from the surface electrode when a spark is initiated across the gap. A plurality of these spark gaps are coupled to a magnetically insulated ion diode. The spark gaps are arrayed around the azimuth of the ion diode so that plasma flows in and out of the diode along the lines of the magnetic field. The method of arraying the gaps results in an efficient, controllable, high density manner with extended pulse length. A second embodiment of these principles results in an advantageous implantation source using permanent magnets rather than grids. The spark gaps permit ion source versatility in that a wide variety of solid surfaces can be used as ion sources.

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patent: 4370176 (1983-01-01), Bruel
patent: 4388560 (1983-06-01), Robinson et al.

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