Ion implantation programmable logic device

Details Ion implantation programmable logic device Ion implantation programmable logic device

1988-10-07

1990-08-28

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307465, 3073032, H63K 19177

Patent

active

049528246

ABSTRACT:
A programmable logic device includes logic cells with input signal circuits for each of the logic cells. In the input circuits first MOS transistors are connected in series or parallel and one end of each of the input signal circuits is connected to one of the inputs of the logic cells. There are also signal lines, each of which interconnects the gates of the first transistors. Output signal circuits have second MOS transistors, each of which is connected to the signal lines, the gates of the second transistors being connected to the outputs of the logic cells. The channels of the first and second transistors can be ion-implanted so that the threshold level of the MOS transistors can be changed.

REFERENCES:
patent: 4032894 (1977-06-01), Williams
patent: 4124899 (1978-11-01), Birkner et al.
patent: 4431928 (1984-02-01), Skokan
patent: 4644191 (1987-02-01), Fisher et al.
patent: 4689654 (1987-08-01), Brockmann
patent: 4703206 (1987-10-01), Cavlan
patent: 4717844 (1988-01-01), Shima et al.
patent: 4772811 (1988-09-01), Fujioka et al.

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