Ion implantation process simulation device realizing accurate in

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39550023, 364178, 708290, G06F 300

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059997192

ABSTRACT:
An ion implantation process simulation device includes a Dual Pearson data extracting unit for generating a Dual Pearson data table from ion implantation profile data, a Dual Pearson data for interpolation obtaining unit for obtaining a parameter for use in the interpolation and extrapolation of a dose coefficient from the Dual Pearson data table, a dose coefficient interpolating/extrapolating unit for expressing an ion implantation profile by linear connection of two functions respectively representing an amorphous component and a channeling component, as well as using a dose-independent moment parameter and a coefficient of linear connection dependent on dose to interpolate and extrapolate a logarithmic value of a channeling component dose coefficient with respect to logarithmic values of all dose values, and a simulation result outputting unit for outputting a simulation result.

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patent: 5859784 (1999-01-01), Sawahata et al.
patent: 5889687 (1999-03-01), Enda
Al F. Tasch et al., "An Improved Approach to Accurately Model Shallow B and BF.sub.2 Implants in Silicon", J. Electrochem. Soc., vol. 136, No. 3, Mar. 1989, pp. 810-814.

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