Ion implantation process for fabricating high frequency avalanch

Metal working – Method of mechanical manufacture – Assembling or joining

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29589, 148175, 148187, 148 15, 331107G, 357 12, 357 13, 357 20, 357 58, 357 81, 357 91, B01J 1700, H01L 21265

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active

040646203

ABSTRACT:
Disclosed are new high frequency ion implanted passivated semiconductor devices and a planar fabrication process therefor wherein initially an ion implantation and PN junction passivation mask is formed on one surface of a semiconductor crystal. Thereafter, one or more conductivity type determining ion species are implanted through an opening in the mask and into the semiconductor crystal to form active device regions including a PN junction, all of which are bounded by an annular, higher resistivity unimplanted region of the semiconductor crystal. The PN junction thus formed terminates beneath the implantation and passivation mask, and the semiconductor crystal is then annealed to remove ion implantation damage and to electrically activate the ion implanted regions, while simultaneously controlling the lateral movement of the PN junction beneath the passivation mask. Such annealing does not adversely affect the conductivity and passivation characteristics of either the higher resistivity annular region or the passivation mask, and the resultant device structure exhibits a small degradation in high frequency performance relative to comparable state of the art unpassivated devices. Devices fabricated with the present new passivated geometry have a structure with sufficient mechanical strength to allow direct mounting into high frequency circuits (of the microwave waveguide-cavity type) without the use of additional package arrangements.

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