Ion-implantation of phosphorus, arsenic or boron by pre-amorphiz

Details Ion-implantation of phosphorus, arsenic or boron by pre-amorphiz Ion-implantation of phosphorus, arsenic or boron by pre-amorphiz

1984-07-25

1986-04-22

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 148DIG24, 357 91, H01L 21265

Patent

active

045840261

ABSTRACT:
A process of forming a low-dose ion implant of one or more of phosphorus, arsenic or boron is described. The desired impurity ion implant is preceded by an amorphizing implant of at least about 10.sup.15 ions/cm.sup.2 of fluorine ions. The implants are advantageously annealed at a temperature below about 800.degree. C.

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Beanland, Solid State Electronics, vol. 21, pp. 537-547, 1978.

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