Ion implantation of gold in mercury cadmium telluride

Details Ion implantation of gold in mercury cadmium telluride Ion implantation of gold in mercury cadmium telluride

1976-03-01

1977-01-18

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 148188, 357 91, H01L 21265

Patent

active

040037592

ABSTRACT:
PN junctions in mercury cadmium telluride are formed by implantation of gold ions and a subsequent low temperature--short duration heat treatment.

REFERENCES:
patent: 3341754 (1967-09-01), Kellett et al.
patent: 3655457 (1972-04-01), Duffy et al.
patent: 3743553 (1973-07-01), Scott et al.
Foyt et al., "Type Conversion and n-p Junction Formation in Hq.sub.1.sub.-x Cd.sub.x Te---- " Appl. Phys. Lett., vol. 18, No. 8, 15 Apr., 1971, pp. 321-323.
Marine et al., "Infrared Photovoltaic Detectors from Ion Implanted Cd.sub.x Hq.sub.1.sub.-x Te," Appl. Phys. Lett., vol. 23, No. 8, 15 Oct. 1973, pp. 450-452.
Fiorito et al., "Hg-Implanted Hq.sub.1.sub.-x Cd.sub.x Te Infrared Photovoltaic Detectors" Appl. Phy. Lett. vol. 23, No. 8, 15 Oct. 1973, pp. 448-449.
Melgailis et al., "Electron Radiation Damage and Annealing of Hq.sub.1.sub.-x Cd.sub.x Te---- " J. Appl. Phys. vol. 44, No. 6, June 1973, pp. 2647-2651.

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