Ion implantation method for making silicon-rich silicon dioxide

Details Ion implantation method for making silicon-rich silicon dioxide Ion implantation method for making silicon-rich silicon dioxide

1986-11-26

1989-07-18

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

437250, 437918, B05D 512

Patent

active

048492485

ABSTRACT:
A silicon dioxide film containing additional silicon in the form of segregates having controlled grain sizs is fabricated by forming a silicon dioxide, injecting silicon ions into the silicon dioxide film by ion implantation with a predetermined ion acceleration energy and a predetermined ion dose, and annealing the resultant silicon dioxide film for causing the additional silicon atoms in the silicon dioxide film to segregate therein to form segregates of silicon having grain sizes which are substantially predominated by the predetermined ion acceleration energy and the predetermined ion dose.

REFERENCES:
patent: 4081292 (1978-03-01), Aoki et al.
patent: 4162176 (1979-07-01), Tsuda
patent: 4197144 (1980-04-01), Kirkpatrick et al.
patent: 4466839 (1984-08-01), Dathe et al.
patent: 4642881 (1987-02-01), Matsukawa

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