Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-02-28
1998-03-24
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250251, G01N 23225
Patent
active
057315930
ABSTRACT:
An ion implantation method is provided, which is able to suppress unwanted positive charges built-up on the surface of an ion-implanted semiconductor wafer. First, a wafer holder kept at a first electric potential and an electrode kept at a second electric potential higher than the first electric potential are prepared. A semiconductor wafer is then placed on the holder to be kept at the first electric potential. The holder is moved so that the wafer held on the holder is located at a first position. A beam of dopant ions is irradiated to the wafer at the first position to thereby implant the dopant ions into the wafer. The holder is then moved so that the wafer thus ion-implanted is located at a second position where the wafer is in the vicinity of the electrode. An electric field is generated between the wafer and the electrode due to the difference between the first and second electric potentials. Positive charges that have been built up on a surface of the ion-implanted wafer are expelled therefrom due to the electric field.
REFERENCES:
patent: 5241186 (1993-08-01), Yunogami et al.
NEC Corporation
Nguyen Kiet T.
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