Ion implantation method and application thereof

Details Ion implantation method and application thereof Ion implantation method and application thereof

2009-02-13

2010-06-29

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S442110, C250S492300, C073S864910

Reexamination Certificate

active

07745804

ABSTRACT:
An ion implantation method for achieving angular uniformity throughout a workpiece and application thereof are provided. The ion beam has at least one beamlet striking the workpiece surface with corresponding incident angles. The workpiece is mapped to an imaginary planar coordinate system. The incident angle of a center beamlet of the ion beam has a projection on the coordinate system forming a projection angle with an axis thereof. A workpiece orientation of the workpiece is adjusted based on the projection angle such that the contribution of each beamlet to the overall ion beam intensity upon striking the workpiece surface is rendered substantially the same from respective directions of each of the coordinate axes.

REFERENCES:
patent: 5929456 (1999-07-01), Tamai
patent: 6806479 (2004-10-01), Wan et al.
patent: 6918351 (2005-07-01), Chen et al.
patent: 2004/0149926 (2004-08-01), Purser et al.

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