Ion implantation method and apparatus

Details Ion implantation method and apparatus Ion implantation method and apparatus

1988-01-22

1989-11-14

Yusko, Donald J.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Electron or ion source

31511191, 3133621, 427 38, H01J 724

Patent

active

048810100

ABSTRACT:
An ion implantation apparatus includes an ion source, ion analyzer, ion acceleration means and ion deflection means interconnected in a sequential manner, but excludes a variable slit shutter as a means for attenuating the ion beam. A controllable source of inactive diluent gas is interconnected so as to provide a means for selecting the concentration of ions provided by the ion source to the ion analyzer.

REFERENCES:
patent: 3075115 (1963-01-01), Flowers et al.
patent: 3200019 (1965-08-01), Scott
patent: 3786249 (1974-01-01), Anbar et al.
patent: 4264642 (1981-04-01), Ferralli
patent: 4382099 (1983-05-01), Legge et al.
patent: 4513021 (1985-04-01), Purdes et al.
patent: 4524303 (1985-06-01), Ritzl
VLSI Fabrication Principles, S. K. Ghandi, John Wiley and Sons, Inc. (New York 1983), pp. 299-344.
Ion Implantation Techniques, H. Ryssel and H. Glawischnig, Editors, Springer-Verlag (New York 1982), pp. 3-8.

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