Ion implantation method

Details Ion implantation method Ion implantation method

1992-10-28

1993-11-23

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

250398, H01J 37317

Patent

active

052647072

ABSTRACT:
An ion implantation method for implanting ions by irradiating an ion beam 18 on the surface of the inner periphery 17a of a hole, characterized in that the ion beam 18 is deflected by magnetic field applied to the inside of the hole to irradiate the beam on the surface of the inner periphery 17a of the hole with an incident angle at or close to right angles. An ion implantation method for implanting ions by irradiating an ion beam 18 on the surface of the inner periphery 17a of a hole, characterized in that the ion beam 18 is irradiated on the surface of the inner periphery 17a of the hole with an incident angle at or close to right angles by inserting a lead-in tube for the ion beam to the inside of the hole and by deflecting the ion beam 18 by applying a voltage having a reverse potential to the ions on the inner surface of the hole.

REFERENCES:
patent: 4663532 (1987-05-01), Roche

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