Ion implantation method

Details Ion implantation method Ion implantation method

1977-10-11

1980-09-30

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29584, 148 15, 358 59, 357 91, 29576B, B01J 1700

Patent

active

042247330

ABSTRACT:
Ions are implanted into a body, such as semiconductor substrate material, through one or more covering layers formed over the body. A thin conductive film is in contact with the covering layer prior to the ion implantation. The ions are implanted into the material through the thin conductive film. The conductive film functions to conduct away any charge which tends to accumulate in the covering layer. The conductive film thereby prevents a charge accumulation which would tend to discharge through and cause damage to the covering layer. The method is particularly useful for fabricating MOS and CMOS semiconductor devices.

REFERENCES:
patent: 3330696 (1967-07-01), Ullery
patent: 3558366 (1971-01-01), Lepselter
patent: 3739237 (1973-06-01), Shannon
patent: 4033797 (1977-07-01), Dill
patent: 4075754 (1978-02-01), Cook

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