Ion implantation method

Details Ion implantation method Ion implantation method

1982-12-08

1984-11-06

Weisstuch, Aaron

Metal treatment

Compositions

Heat treating

29571, 29576B, 2504922, 357 91, H01L 2170

Patent

active

044810423

ABSTRACT:
An ion implantation method is provided which uses an ion implantation apparatus which is capable of focusing an ion beam into a spot having a diameter smaller than the size of a region into which ions are to be implanted. The ion dose is varied in accordance with the gate region, source and drain regions, and the field region of a semiconductor device including a transistor having short gate length and width.

REFERENCES:
patent: 4063103 (1977-12-01), Sumi
patent: 4254340 (1981-03-01), Camplan et al.
patent: 4283631 (1981-08-01), Turner
"Fabrication of lateral doping profiles by a computer-controlled focused ion beam", R. L. Seliger and J. W. Ward, J. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975, pp. 1378-1381.

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