Fishing – trapping – and vermin destroying
Patent
1992-01-17
1993-08-24
Fourson, George
Fishing, trapping, and vermin destroying
437 30, 437248, H01L 21265
Patent
active
052388581
ABSTRACT:
An ion implantation method for forming a high concentration dopant implanted layer in a semiconductor substrate comprising irradiating an ion beam of a desired dopant in the semiconductor substrate and annealing the resultant, in which the irradiation of the ion beam is conducted with stepwise reduction of an acceleration energy for the ion beam, intercepting at least for a period during its reduction being proceeded, whereby affording the high concentration dopant implanted layer distributed as a substantially contiguous amorphous layer, and an ion implantation apparatus comprising an ion source, ion attracting means for attracting ions from the ion source, ion selecting means for selecting specified ions among the ions attracted by the ion attracting means, accelerating means for accelerating a beam of the specified ions selected by the ion selecting means with an acceleration energy stepwise reduced, beam scanning means for scanning a direction of the ion beam accelerated by the accelerating means, a sample cell having an opening through which the ion beam scanned by the beam scanning means is introduced thereto, intercepting means for intercepting the ion beam introduced to the sample cell and control means for controlling the accelerating means and the intercepting means in operation.
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Fourson George
Sharp Kabushiki Kaisha
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