Ion implantation method

Details Ion implantation method Ion implantation method

1990-04-19

1992-09-15

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 250251, H01J 3730

Patent

active

051480344

ABSTRACT:
A method of ion implantation of a semiconductor devices to neutralize electrostatic charge stored on a wafer. Neutralizing electrons are supplied to a passage through which a positive ion beam is passed while forming a barrier of negative electrostatic potential between an area in the passage to which the neutralizing electrons are supplied and the wafer. When the positive ion beam is not present in the passage, the potential of the barrier is set lower than the negative potential corresponding to energy held in the neutralizing electrons. When the beam is not passed through the passage, most of the neutralizing electrons cannot cross over the barrier, but when the beam is passed through the passage, most of the electrons can cross over the barrier, following it, to shower over the wafer.

REFERENCES:
patent: 3175820 (1965-03-01), Schiler
patent: 4463255 (1984-07-01), Robertson et al.
patent: 4494005 (1985-01-01), Shibata et al.
patent: 4916311 (1990-04-01), Fugishita et al.

Affiliated with

Also associated with

Rating

Ion implantation method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-738155