Ion-implantation machine, control method thereof, and...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492300

Reexamination Certificate

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07060995

ABSTRACT:
An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.

REFERENCES:
patent: 5466942 (1995-11-01), Sakai et al.
patent: 6093625 (2000-07-01), Wagner et al.

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