Ion implantation ion source, system and method

Details Ion implantation ion source, system and method Ion implantation ion source, system and method

2007-03-06

2007-03-06

Chen, Shih-Chao (Department: 2821)

Coating apparatus

Gas or vapor deposition

With treating means

C251S315040

Reexamination Certificate

active

10887426

ABSTRACT:
An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

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