Ion implantation ion source, system and method

Details Ion implantation ion source, system and method Ion implantation ion source, system and method

2006-09-19

2006-09-19

Lee, Wilson (Department: 2821)

Coating apparatus

Gas or vapor deposition

With treating means

C315S111810

Reexamination Certificate

active

07107929

ABSTRACT:
An ion source for an ion implantation system includes a vaporizer for producing a process gas; an electron source for generating an electron beam to ionize the process gas within a ionization chamber. The ionization chamber includes an extraction aperture for extracting an ion beam. The ion source, in accordance with the preset invention, is configured to be able to be retrofit into the design space of existing ion sources in, for example, Bernas source-based ion implanters.

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patent: 6111260 (2000-08-01), Dawson et al.
patent: 6452338 (2002-09-01), Horsky

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