Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Electron or ion source
Patent
1990-06-19
1991-12-03
LaRoche, Eugene R.
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Electron or ion source
31511191, 250423R, H01J 2702
Patent
active
050702750
ABSTRACT:
An ion implantation device which is characterized in that source gas is supplied to an ion source from a gas cylinder provided in an external portion of the ion implantation device to maintain the cleanness of the clean room by reducing the frequency of exchanging gas cylinder for new one.
REFERENCES:
patent: 4124802 (1978-11-01), Terasawa et al.
patent: 4560879 (1985-12-01), Wu et al.
patent: 4634931 (1987-01-01), Taya et al.
patent: 4782304 (1988-11-01), Aitken
patent: 4881010 (1989-11-01), Jetter
patent: 4883969 (1989-11-01), Ishida et al.
patent: 4893019 (1990-01-01), Oomori et al.
Ibuka Shigehito
Kondo Hisashi
Sagami Shigeru
Sumi Koji
LaRoche Eugene R.
Tokyo Electron Limited
Yoo Do Hyun
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