Ion implantation control using charge collection, optical emissi

Details Ion implantation control using charge collection, optical emissi Ion implantation control using charge collection, optical emissi

1998-12-22

2000-08-15

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118723R, 216 60, 427 7, C23C 1600

Patent

active

061019712

ABSTRACT:
Apparatus and method for implanting ions into a workpiece surface. A concentration of ions is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data with a database of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.

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