Ion implantation control system

Details Ion implantation control system Ion implantation control system

1983-03-29

1985-05-14

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

A61K 2702, H01J 3700

Patent

active

045174652

ABSTRACT:
A control system is disclosed for an ion implantation system of the type in which the wafers to be implanted are mounted around the periphery of a disk which rotates and also moves in a radial direction relative to an ion beam to expose successive sections of each wafer to the radiation. The control system senses beam current which passes through one or more apertures in the disk and is collected by a Faraday cup. This current is integrated to obtain a measure of charge which is compared with a calculated value based upon the desired ion dosage and other parameters. The resultant controls the number of incremental steps the rotating disk moves radially to expose the adjacent sections of each wafer. This process is continued usually with two or more traverses until the entire surface of each wafer has been implanted with the proper ion dosage.

REFERENCES:
patent: 3689766 (1972-09-01), Freeman
patent: 3778626 (1973-12-01), Robertson
patent: 4011449 (1977-03-01), Ko et al.
patent: 4021675 (1977-05-01), Shifrin
patent: 4234797 (1980-11-01), Ryding
patent: 4383178 (1983-05-01), Shibata et al.

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