Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1985-12-05
1987-10-27
Fields, Carolyn E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504923, 118729, G21G 500
Patent
active
047031832
ABSTRACT:
A process for computer-controlled cleaning of particulates from surfaces, in particular those of semiconductor wafers, which are in the volume of an ion-implantation chamber prior to the implantation of electrically active ions into the wafers. The process utilizes the wafer-holding disk, which carries the semiconductor wafers during implantation, to create a strong turbulence of gas within the end station volume of the ion implanter. This loosens particulates from interior surfaces of the end chamber. The airborne particulates are then evacuated from the chamber volume by a vacuum pump. A single sequence, consisting of air agitation followed by flushing and then filling, reduces the particulate count by an incremental amount; a series of such sequences results in the desired asymptotic reduction in particulate contamination.
REFERENCES:
patent: 4138306 (1979-02-01), Niwa
patent: 4234797 (1980-11-01), Ryding
patent: 4419584 (1983-12-01), Benveniste
patent: 4430547 (1984-02-01), Yoneda et al.
patent: 4529474 (1985-07-01), Fujiyama et al.
patent: 4567938 (1986-02-01), Turner
patent: 4587433 (1986-05-01), Farley
patent: 4608063 (1986-08-01), Kurokawa
Eaton Corporation
Fields Carolyn E.
Guss Paul A.
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