Ion implantation apparatus with variable width slits providing a

Details Ion implantation apparatus with variable width slits providing a Ion implantation apparatus with variable width slits providing a

1991-10-22

1993-06-01

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, 250398, H01J 37317, H01J 37145

Patent

active

052162532

ABSTRACT:
In an ion implantation apparatus, a first slit for limiting an ion beam width is provided between an ion source and a mass separation electromagnet. An accelerator is provided behind the mass separation electromagnet. A second slit for separating the ion beam is provided between a deflector provided behind the accelerator and a wafer. The slit widths of the first and second slits are controlled by a controller which monitors an ion source acceleration voltage, a magnetic field intensity of the mass separation electromagnet, an accelerator voltage, and a magnetic field intensity of the deflector, and control the slit widths of the first and second slits based on the monitored information.

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LSI Process Engineering 1982 pp. 116-119 (submitted by applicant).

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