Ion implantation apparatus utilizing multiple aperture source pl

Details Ion implantation apparatus utilizing multiple aperture source pl Ion implantation apparatus utilizing multiple aperture source pl

1975-06-30

1976-12-21

Rolinec, R. V.

Electric lamp and discharge devices

With positive or negative ion acceleration

Means for deflecting or focusing

313458, 313411, 219121EB, 250307, 250492A, 315 31R, H05H 706, H01J 2150

Patent

active

039990974

ABSTRACT:
In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implanted with prescribed ion dosages.

REFERENCES:
patent: 3117022 (1964-01-01), Bronson
patent: 3394217 (1968-07-01), Fisk
patent: 3406305 (1968-10-01), Schiller et al.
patent: 3434894 (1969-03-01), Gale
patent: 3491236 (1970-01-01), Newberry
patent: 3558967 (1971-01-01), Miriam
patent: 3585397 (1971-06-01), Brewer
patent: 3843901 (1974-10-01), Standaart
"A Multiampere Duo Pigatron Ion Source," by R. C. Davis et al., Review of Scientific Instruments, vol. 43, No. 2, Feb. 1972, (pp. 278-283).
"Production of Large Area High Current Ion Beams," by Y. Okamoto and H. Tamagawa, Review of Scientific Instruments, vol. 43, No. 8, Aug. 1972, (pp. 1193-1197).
"Record of the 11th Symposium of Electron, Ion, and Laser Beam Technology".

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