Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2010-02-09
2011-11-22
Souw, Bernard E (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S491100, C250S492100, C250S492210
Reexamination Certificate
active
08063388
ABSTRACT:
Provided is an ion implantation apparatus including a disk which rotates about a first axis, a pad which is rotatable about a second axis on the disk, and on which a substrate is placed with a holder attached to a circumference of the substrate, the holder including a weight, fixing pins which are each fixedly provided on a portion on the disk around the pad, a sliding piece which slides, by its own centrifugal force, on the disk with a rotational movement of the disk and thereby clamps the holder in cooperation with the fixing pins, and an ion beam generator which irradiates the substrate with ion beams.
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International Search Report of PCT/JP2007/066855, mailing date of Nov. 27, 2007.
Fujitsu Semiconductor Limited
Souw Bernard E
Westerman Hattori Daniels & Adrian LLP
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