Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Electron or ion source
Reexamination Certificate
2000-09-21
2002-05-28
Philogene, Haissa (Department: 2821)
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Electron or ion source
C315S111910, C250S492210, C250S441110
Reexamination Certificate
active
06396215
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to an ion-implantation apparatus and a method of ion-implantation by use of this apparatus, and more particularly to an ion-implantation apparatus capable of suppressing a shift of an ion-implantation amount due to an out gas from a resist over a wafer and a method of ion-implantation by use of this apparatus.
FIG. 1
is a schematic cross sectional view illustrative of a conventional ion-implantation apparatus. The conventional ion-implantation apparatus has the following elements. A chamber
1
is provided which accommodates a semiconductor wafer
2
over which a resist is provided. A pressure gage
5
is also provided on the chamber
1
for measuring an internal pressure of the chamber
1
. A dose counter
6
is also provided in the chamber
1
for receiving an ion-beam
3
and measuring a dose of the ion-beam
3
.
If the ion-beam
3
is irradiated onto the resist over the semiconductor wafer
2
, then an out-gas from the resist neutralizes or ionizes the ion-beam
3
, whereby an amount of the ion-implantation is shifted from when the ion-beam
3
is irradiated onto the semiconductor wafer free of resist.
It is necessary to maintain the measurement to the internal pressure of the chamber by the vacuum gage during the ion-implantation process for the purpose of making a real time calculation of the neutralization or ionization of the ion-beam
3
so as to correct the amount of ion-implantation. The neutralization or ionization of the ion-beam
3
varies depending upon the kinds of ion, the beam current, the ion-implantation energy, and the resist material, for which reason the calculation of the neutralization or ionization of the ion-beam
3
are needed for every times.
In the above circumstances, it had been required to develop a novel ion-implantation apparatus and a method of ion-implantation by use of this apparatus free from the above problem.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the present invention to provide a novel ion-implantation apparatus free from the above problems.
It is a further object of the present invention to provide a novel ion-implantation apparatus capable o:f suppressing the shift of the ion-implantation when the ion-beam is irradiated onto the resist over the semiconductor wafer.
It is a still further object of the present invention to provide a novel method of ion-implantation free from the above problems.
It is yet a further object of the present invention to provide a novel method of ion-implantation for suppressing the shift of the ion-implantation when the ion-beam is irradiated onto the resist over the semiconductor wafer.
The present invention provides an ion-implantation apparatus comprising: a chamber; and a pressure controller for maintaining an internal pressure of the chamber at not less than 1E-4 Torr during an ion-implantation process.
The above and other objects, features and advantages of the present invention will be apparent from the following descriptions.
REFERENCES:
patent: 3778626 (1973-12-01), Robertson
patent: 5314541 (1994-05-01), Saito et al.
patent: 5672882 (1997-09-01), Day et al.
patent: 0 537 379 (1993-04-01), None
patent: 5-221793 (1993-08-01), None
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