Ion implantation apparatus and method of controlling the same

Details Ion implantation apparatus and method of controlling the same Ion implantation apparatus and method of controlling the same

1990-05-09

1991-03-26

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

050031830

ABSTRACT:
An ion implantation apparatus comprises: an implantation chamber into which an ion beam is entered, the ion beam being scanned in an X direction; a holder for holding a wafer in the implantation chamber; and a holder drive unit for mechanically scanning the holder in a Y direction substantially perpendicular to the X direction in the implantation chamber. The holder drive unit swingingly rotates the holder so that the wafer is mechanically scanned in the Y direction.

REFERENCES:
patent: 4733091 (1988-03-01), Robinson et al.
patent: 4899059 (1990-02-01), Freytsis

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