Ion implantation apparatus and method of cleaning the same

Details Ion implantation apparatus and method of cleaning the same Ion implantation apparatus and method of cleaning the same

1991-08-28

1992-09-01

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3736

Patent

active

051441470

ABSTRACT:
The present invention is directed to the cleaning of an ion implantation apparatus. The ion implantation apparatus of the present invention comprises a sample holder 21 and a gauge 23 acting as a passageway of an ion beam running toward a sample held by the sample holder. The gauge is provided with a gas inlet port 25 for introducing a reactive gas into the ion beam passageway. The reactive gas collides against the ion beam within the ion beam passageway so as to be ionized. The ionized reactive permits removing a stain attached to the ion implantation apparatus. If the ion implantation apparatus further comprises a bias source 26 for applying voltage of a desired polarity to the gauge, the cleaning can be performed more efficiently.

REFERENCES:
patent: 3983402 (1976-09-01), Arndt, Jr. et al.
patent: 4361762 (1982-11-01), Douglas
patent: 4585945 (1986-04-01), Bruel et al.
patent: 4857137 (1989-08-01), Tachi
Abstract of Japanese Appln. No. 61-047048 dated Mar. 7, 1986, Patent Abstract of Japan, vol. 10, No. 205 dated Jul. 17, 1986 (E-420) [2261].
Abstract of Japanese Appln. No. 61-135037 dated Jun. 23, 1986, Patent Abstract of Japan, vol. 10, No. 329 dated Nov. 8, 1986 (E-452) [2385].

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