Ion implantation apparatus and method for maskless processing

Details Ion implantation apparatus and method for maskless processing Ion implantation apparatus and method for maskless processing

1984-12-28

1987-02-03

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, G01N 2300

Patent

active

046410341

ABSTRACT:
This invention relates to an ion implantation apparatus and method for maskless processing of substrate, and more particularly, to form ion implanted pattern by selectively scanning a focused ion beam on the surface of a processing substrate. The timing of the apparatus is controlled by a variable frequency clock pulse. By using the variable frequency oscillator, a clock frequency can be controlled continuously. So, the ion implantation pattern is easily controlled by the clock frequency and scanning number with high accuracy compared to a prior art.

REFERENCES:
patent: 4421988 (1983-12-01), Robertson et al.
patent: 4433247 (1984-02-01), Turner
patent: 4517465 (1985-05-01), Gault et al.

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